- Title
- Bonding and electronics of the MoTe₂/Ge interface under strain
- Creator
- Szary, Maciej J.; Michalewicz, Marek T.; Radny, Marian W.
- Relation
- Physical Review B Vol. 95, Issue 20, no. 205421
- Publisher Link
- http://dx.doi.org/10.1103/PhysRevB.95.205421
- Publisher
- American Physical Society
- Resource Type
- journal article
- Date
- 2017
- Description
- Understanding the interface formation of a conventional semiconductor with a monolayer of transition-metal dichalcogenides provides a necessary platform for the anticipated applications of dichalcogenides in electronics and optoelectronics. We report here, based on the density functional theory, that under in-plane tensile strain, a 2H semiconducting phase of the molybdenum ditelluride (MoTe2) monolayer undergoes a semiconductor-to-metal transition and in this form bonds covalently to bilayers of Ge stacked in the [111] crystal direction. This gives rise to the stable bonding configuration of the MoTe2/Ge interface with the ±K valley metallic, electronic interface states exclusively of a Mo 4d character. The atomically sharp Mo layer represents therefore an electrically active (conductive) subsurface δ-like two-dimensional profile that can exhibit a valley-Hall effect. Such system can develop into a key element of advanced semiconductor technology or a novel device concept.
- Subject
- electronic structure; strain; surface states; semiconducting systems; density functional theory
- Identifier
- http://hdl.handle.net/1959.13/1351230
- Identifier
- uon:30669
- Identifier
- ISSN:2469-9950
- Rights
- Copyright (2017) by The American Physical Society.
- Language
- eng
- Full Text
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